Computational Electronics: Semiconductor Transport and by M. R. Pinto, W. M. Coughran Jr., C. S. Rafferty, R. K.

By M. R. Pinto, W. M. Coughran Jr., C. S. Rafferty, R. K. Smith, E. Sangiorgi (auth.), K. Hess, J. P. Leburton, U. Ravaioli (eds.)

Large computational assets are of ever expanding value for the simulation of semiconductor strategies, units and built-in circuits. The Workshop on Computational Electronics used to be meant to be a discussion board for the dis­ cussion of the cutting-edge of gadget simulation. 3 significant examine parts have been lined: traditional simulations, according to the drift-diffusion and the hydrodynamic versions; Monte Carlo equipment and different concepts for the answer of the Boltzmann delivery equation; and computational ways to quantum delivery that are proper to novel units in response to quantum interference and resonant tunneling phenomena. Our target used to be to collect researchers from numerous disciplines that give a contribution to the development of equipment simulation. those comprise computing device Sci­ ence, electric Engineering, utilized Physics and utilized arithmetic. The suc­ cess of this multidisciplinary formulation used to be confirmed by way of a number of interactions which came about on the Workshop and through the subsequent three-day brief path on Computational Electronics. The structure of the path, together with a few educational lectures, and the massive attendance of graduate scholars, prompted many discussions and has confirmed to us once again the significance of cross-fertilization among different disciplines.

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I'. I' I' 50000 .. " , -500 I ......... -~:,;....... 0 100000 J• ...... ~. ~P.!. 5 Simulation results at 25 GHz: al RF and DC solutions at l=10 ps b Terminal Voltages and Current Densities using I-D Temperature Model c Electron Temperature at various times in the RF cycle d Carrier Concentrations at various times in the RF cycle j 46 From the terminal voltages and currents, the power at the fundamental and harmonic frequencies can be calculated as shown in the table below: Harmonic Power I II 4 harmonic 1 2 3 I Pin(W/Cm 2 ) I Pout (W/cm 2 ) I I 774 0 0 I 5193 666 23 II Conclusion The results presented indicate that use of conventional quasistatic modeling techniques are no longer valid at higher frequencies.

UCLA, Los Angeles, CA 90024. Research supported in part by NSF grant DMS-8811863. tDepartment of Computer Science, Duke University, Durham, NC 27706. Research supported in part by NSF grant DMS-8905872 and by the Microelectronics Center of North Carolina. IDepartment of Mathematics, Northwestern University, Evanston, IL 60201. Research supported in part by NSF grant DMS-8721742. §Department of Mathematics, UCLA, Los Angeles, CA 90024. Research supported in part by NSF grant DMS-8811863, ONR grant NOOOI4-86-K-0691, and NASA grant NAGI-270.

J (5) 49 8.. n(Fp , F", . ,) - tPi,H1 - tPi,j 2 (6) where tP is the electric potential, In the electron current, i and j the grid numbers, hand k the geometrical factors, and Fp and F" the parallel and vertical electric fields with respect to the direction of the current flow. By Eq. (5) and Eq. (6), the augmented current equation can be readily expressed with the new mobility and diffusivity models: (7) D(Fp, F,,) = kBTC(Fp) q I'LIs(Fp, F,,) (8) OSMOSIS is divided into five different sections for modification ease: 1.

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