# A. F. Lavriks truncated equations by Kaufman R. M.

By Kaufman R. M.

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Extra info for A. F. Lavriks truncated equations

Example text

In a postprocessing step we computed the length of the ﬁrst 50 periods for each solution path and then from these the corresponding frequencies. In Fig. 6 the mean μ of the frequencies (horizontal lines), the smallest and the largest frequencies (boundaries of the vertical thin lines) and the boundaries of the conﬁdence interval μ ± σ (the plump lines) are presented, where σ was computed as the empirical estimate of the standard deviation. 25% from the noiseless, deterministic solution. 55%). So the transient noise analysis shows that the voltage controlled oscillator runs in a noisy environment with increased frequencies and smaller phases, respectively.

F. Brezzi, L. Marini, S. Micheletti, P. Pietra, R. Sacco, and S. Wang. Discretization of semiconductor device problems. In: W. Schilders and E. ), Handbook of Numerical Analysis. Numerical Methods in Electromagnetics. Elsevier, Amsterdam, Vol. 13 (2005), 317–441. 5. M. Brunk and A. J¨ ungel. Numerical coupling of electric circuit equations and energy-transport models for semiconductors. To appear in SIAM J. Sci. , 2007. 6. M. Brunk and A. J¨ ungel. Simulation of thermal eﬀects in optoelectronic devices using energy-transport equations.

Brezzi, L. Marini, S. Micheletti, P. Pietra, R. Sacco, and S. Wang. Discretization of semiconductor device problems. In: W. Schilders and E. ), Handbook of Numerical Analysis. Numerical Methods in Electromagnetics. Elsevier, Amsterdam, Vol. 13 (2005), 317–441. 5. M. Brunk and A. J¨ ungel. Numerical coupling of electric circuit equations and energy-transport models for semiconductors. To appear in SIAM J. Sci. , 2007. 6. M. Brunk and A. J¨ ungel. Simulation of thermal eﬀects in optoelectronic devices using energy-transport equations.